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GB30NC60K - IGBT

General Description

oleThis IGBT utilizes the advanced PowerMESH™ sprocess resulting in an excellent trade-off bbetween switching performance and low on-state Obsolete Product(s) - Obehavior.

Figure 1.

Table 1.

Key Features

  • Low on-voltage drop (VCE(sat)).
  • Low Cres / Cies ratio (no cross conduction susceptibility) ).
  • Short circuit withstand time 10 µs ct(s.

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STGB30NC60K STGP30NC60K 30 A - 600 V - short circuit rugged IGBT Features ■ Low on-voltage drop (VCE(sat)) ■ Low Cres / Cies ratio (no cross conduction susceptibility) )■ Short circuit withstand time 10 µs ct(sApplications du■ High frequency inverters ro■ Motor drivers te PDescription oleThis IGBT utilizes the advanced PowerMESH™ sprocess resulting in an excellent trade-off bbetween switching performance and low on-state Obsolete Product(s) - Obehavior. 3 1 D²PAK 3 2 1 TO-220 Figure 1. Internal schematic diagram Table 1. Device summary Order codes Marking STGB30NC60KT4 GB30NC60K STGP30NC60K GP30NC60K Package D²PAK TO-220 Packaging Tape and reel Tube March 2008 Rev 2 1/15 www.st.com 15 Contents Contents STGB30NC60K - STGP30NC60K 1 Electrical ratings . . . . . . . . .