STMicroelectronics GB30NC60K
IGBT
FEATURES
● Low on-voltage drop (VCE(sat))● Low Cres / Cies ratio (no cross conduction susceptibility) )● Short circuit withstand time 10 µs ct(sApplications du● High frequency inverters ro● Motor drivers te PDescription oleThis IGBT utilizes the advanced PowerMESH™ sprocess resulting in an excellent trade-off bbetween switching performance and low on-state Obsolete Product(s) - Obehavior. 3 1 D²PAK 3 2 1 TO-220 Figure 1. Internal schematic diagram Table 1. Device summary Order codes Marking STGB30NC60KT4 GB30NC60K STGP30NC60K GP30NC60K Package D²PAK TO-220 Packaging Tape and reel Tube March 2008 Rev 2 1/15 15 Contents Contents STGB30NC60K - STGP30NC60K 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Elec