GB30NC60K
Key Features
- Low on-voltage drop (VCE(sat))
- Low Cres / Cies ratio (no cross conduction susceptibility) )
- Short circuit withstand time 10 µs ct(sApplications du
- High frequency inverters ro
- Motor drivers te PDescription oleThis IGBT utilizes the advanced PowerMESH™ sprocess resulting in an excellent trade-off bbetween switching performance and low on-state Obsolete Product(s) - Obehavior. 3 1 D²PAK 3 2 1 TO-220 Figure
- Internal schematic diagram Table
- Device summary Order codes Marking
