GB30V60DF
Key Features
- Maximum junction temperature: TJ = 175 °C
- Tail-less switching off
- VCE(sat) = 1.85 V (typ.) @ IC = 30 A
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
- Very fast soft recovery antiparallel diode
- Part: GB30V60DF
- Description: IGBT
- Manufacturer: STMicroelectronics
- Size: 1.83 MB