STMicroelectronics GB40H65FB
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter.| Part No. | GB40H65FB |
|---|---|
| Datasheet | GB40H65FB Download |
| Manufacturer |  STMicroelectronics |
| Description | Trench gate field-stop IGBT |
| Buy | Stock & Price |
FEATURES
● Maximum junction temperature: TJ = 175 °C● High speed switching series
● Minimized tail current
● Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A
● Tight parameter distribution
● Safe paralleling
● Low thermal resistance
APPLICATIONS
● Photovoltaic inverters● High frequency converters
DESCRIPTION
Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Order code STGB40H65FB G1C2TE3 Table 1: Device summ
