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GB40H65FB - Trench gate field-stop IGBT

Datasheet Summary

Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.

The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter.

Features

  • Maximum junction temperature: TJ = 175 °C.
  • High speed switching series.
  • Minimized tail current.
  • Low saturation voltage: VCE(sat) = 1.6 V (typ. ) @ IC = 40 A.
  • Tight parameter distribution.
  • Safe paralleling.
  • Low thermal resistance.

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Datasheet preview – GB40H65FB

Datasheet Details

Part number GB40H65FB
Manufacturer STMicroelectronics
File Size 824.12 KB
Description Trench gate field-stop IGBT
Datasheet download datasheet GB40H65FB Datasheet
Additional preview pages of the GB40H65FB datasheet.

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    Full PDF Text Transcription

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    STGB40H65FB Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data TAB 2 3 1 D²PAK Figure 1: Internal schematic diagram C(2, TAB) G(1) E(3) Features  Maximum junction temperature: TJ = 175 °C  High speed switching series  Minimized tail current  Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A  Tight parameter distribution  Safe paralleling  Low thermal resistance Applications  Photovoltaic inverters  High frequency converters Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter.
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