GB6NC60H Datasheet | STMicroelectronics

STGB6NC60H N-channel 600V - 7A - D2PAK Very fast Power MESH™ IGBT General Features Type STGB6NC60H VCES 600V VCE(sat)max @25°C <2.5V IC @100°C 7A - Low on voltage drop (Vcesat) - Low CRES / CIES ratio (no cross-conduction 3 1 susceptibility) )- Very soft ultra fast recovery antiparallel diode t(s- High frequency operation duc Description ro Using the latest high voltage technology based on Pa patented strip layout, STMicroelectronics has tedesigned an advaced family of IGBTs, the le Power MESH™ IGBTs, with outstanding operformances. The suffix “H” identifies a family soptimized for high frequency application in order bto achieve very high switching performances O(reduced tfall) mantaining a low voltage drop. t(s) -Applications c- High frequency inverters du- SMPS and PFC in both hard switch and roresonant topologies P- Motor drivers D²PAK Internal schematic diagram Obsolete Order codes Part number Marking Package Packaging STGB6NC60HT4 D²P...