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GB6NC60H - IGBT

Description

roUsing the latest high voltage technology based on Pa patented strip layout, STMicroelectronics has tedesigned an advaced family of IGBTs, the lePowerMESH™ IGBTs, with outstanding operformances.

Features

  • Type STGB6NC60H VCES 600V VCE(sat)max @25°C.

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    STGB6NC60H N-channel 600V - 7A - D2PAK Very fast PowerMESH™ IGBT General features Type STGB6NC60H VCES 600V VCE(sat)max @25°C <2.5V IC @100°C 7A ■ Low on voltage drop (Vcesat) ■ Low CRES / CIES ratio (no cross-conduction 3 1 susceptibility) )■ Very soft ultra fast recovery antiparallel diode t(s■ High frequency operation ducDescription roUsing the latest high voltage technology based on Pa patented strip layout, STMicroelectronics has tedesigned an advaced family of IGBTs, the lePowerMESH™ IGBTs, with outstanding operformances. The suffix “H” identifies a family soptimized for high frequency application in order bto achieve very high switching performances O(reduced tfall) mantaining a low voltage drop.
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