GB8NC60KD Overview
This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Internal schematic diagram Table 1. 18 Contents Contents STGB8NC60KD - STGD8NC60KD - STGF8N.
GB8NC60KD Key Features
- Lower on voltage drop (VCE(sat))
- Lower CRES / CIES ratio (no cross-conduction
- Very soft ultra fast recovery antiparallel diode
- Short circuit withstand time 10 µs