STMicroelectronics GB8NC60KD
This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.FEATURES
● Lower on voltage drop (VCE(sat))● Lower CRES / CIES ratio (no cross-conduction susceptibility)
● Very soft ultra fast recovery antiparallel diode
● Short circuit withstand time 10 µs
APPLICATIONS
● High frequency motor controls● SMPS and PFC in both hard switch and resonant topologies
● Motor drivers
DESCRIPTION
3 2 1 TO-220 3 2 1 TO-220FP 2 3 1 DPAK 2 3 1 D²PAK Figure 1. Internal schematic diagram Table 1. Device summary Order codes Marking STGB8NC60KDT4 GB8NC60KD STGD8NC60KDT4 GD8NC60KD STGF8NC60KD GF8NC60KD STGP8NC60KD GP8NC60KD Package D²PAK DPAK TO-220FP TO-220 April 2008 Rev 2 Packaging Tape and reel Tape and reel Tube Tube 1/18 18 Contents Contents STGB8NC60KD - STGD8NC60KD - STGF8N