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GD10NC60KD - short-circuit rugged IGBT

General Description

These devices are very fast IGBTs developed using advanced PowerMESH™ technology.

This process guarantees an excellent trade-off between switching performance and low on-state behavior.

These devices are well-suited for resonant or soft-switching applications.

Key Features

  • Lower on voltage drop (VCE(sat)).
  • Lower CRES / CIES ratio (no cross-conduction susceptibility).
  • Very soft ultra fast recovery antiparallel diode.
  • Short-circuit withstand time 10 μs.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STGB10NC60KDT4, STGD10NC60KDT4, STGF10NC60KD, STGP10NC60KD 10 A, 600 V short-circuit rugged IGBT Datasheet - production data Figure 1: Internal schematic diagram Features  Lower on voltage drop (VCE(sat))  Lower CRES / CIES ratio (no cross-conduction susceptibility)  Very soft ultra fast recovery antiparallel diode  Short-circuit withstand time 10 μs Applications  High frequency motor controls  SMPS and PFC in both hard switch and resonant topologies  Motor drives Description These devices are very fast IGBTs developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications.