GD10NC60KD Description
These devices are very fast IGBTs developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications.
GD10NC60KD Key Features
- Lower on voltage drop (VCE(sat))
- Lower CRES / CIES ratio (no cross-conduction
- Very soft ultra fast recovery antiparallel
- Short-circuit withstand time 10 μs