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STGD6NC60H
N-channel 600V - 7A - DPAK Very fast PowerMESH™ IGBT
General features
Type
VCES
VCE(sat)Max @25°C
IC @100°C
STGD6NC60H 600V <2.5V
7A
t(s)■ Low on voltage drop (Vcesat) c■ Low CRES / CIES ratio (no cross-conduction ususceptibility) rod )■ High frequency operation
te P ct(sDescription le duUsing the latest high voltage technology based on so roa patented strip layout, STMicroelectronics has b Pdesigned an advanced family of IGBTs, the - O tePowerMESH™ IGBTs, with outstanding
performances. The suffix “H” identifies a family
) leoptimized for high frequency application in order t(s oto achieve very high switching performances c bs(reduced tfall) manta in ing a low voltage drop.