Datasheet Summary
STGB10HF60KD STGF10HF60KD, STGP10HF60KD
10 A
- 600 V
- short-circuit rugged IGBT
Features
- Low on-voltage drop (VCE(sat))
- Operating junction temperature up to 175 °C
- Low Cres / Cies ratio (no cross conduction
)susceptibility) t(s- Tight parameter distribution uc- Ultrafast soft-recovery antiparallel diode d- Short-circuit rugged ProApplications lete- Motor drives o- High frequency inverters bs- SMPS and PFC in both hard switch and Oresonant topologies t(s) -Description cThis device utilizes the advanced PowerMESH™ uprocess for the IGBT and the Turbo 2 Ultrafast dhigh voltage technology for the diode. The robination results in a very good trade-off Pbetween conduction losses and...