STMicroelectronics GF10NB60SD
This IGBT utilizes the advanced Power MESH™ process featuring extremely low on-state voltage drop in low-frequency working conditions (up to 1 kHz).FEATURES
● Low on-voltage drop (VCE(sat))● High current capability
● Very soft ultra fast recovery antiparallel diode
APPLICATIONS
● Light dimmer● Static relays
● Motor drive
DESCRIPTION
TAB 3 2 1 TO-220FP 3 2 1 TO-220 Figure 1. Internal schematic diagram Table 1. Device summary Order codes Marking STGF10NB60SD STGP10NB60SD GF10NB60SD GP10NB60SD Package TO-220FP TO-220 September 2011 Doc ID 11860 Rev 3 Packaging Tube Tube 1/15 15 Contents Contents STGF10NB60SD, STGP10NB60SD 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical character