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GF10NB60SD - low drop IGBT

General Description

This IGBT utilizes the advanced Power MESH™ process featuring extremely low on-state voltage drop in low-frequency working conditions (up to 1 kHz).

Figure 1.

Table 1.

Key Features

  • Low on-voltage drop (VCE(sat)).
  • High current capability.
  • Very soft ultra fast recovery antiparallel diode.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STGF10NB60SD STGP10NB60SD 16 A, 600 V, low drop IGBT with soft and fast recovery diode Features ■ Low on-voltage drop (VCE(sat)) ■ High current capability ■ Very soft ultra fast recovery antiparallel diode Applications ■ Light dimmer ■ Static relays ■ Motor drive Description This IGBT utilizes the advanced Power MESH™ process featuring extremely low on-state voltage drop in low-frequency working conditions (up to 1 kHz). TAB 3 2 1 TO-220FP 3 2 1 TO-220 Figure 1. Internal schematic diagram Table 1. Device summary Order codes Marking STGF10NB60SD STGP10NB60SD GF10NB60SD GP10NB60SD Package TO-220FP TO-220 September 2011 Doc ID 11860 Rev 3 Packaging Tube Tube 1/15 www.st.com 15 Contents Contents STGF10NB60SD, STGP10NB60SD 1 Electrical ratings . . . . . . . . . . . . . . . . .