STMicroelectronics GF14NC60KD
This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.FEATURES
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● TAB 2 TAB Short circuit withstand time 10µs. Low on-voltage drop (VCE(sat)) Low Cres / Cies ratio (no cross conduction susceptibility) Switching losses include diode recovery energy Very soft ultra fast recovery antiparallel diode 3 1 1 2 3 D²PAK TO-220 3
APPLICATIONS
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● 1 2 High frequency inverters SMPS and PFC in both hard switch and resonant topologies Motor drivers Figure 1. TO-220FP Internal schematic diagram
DESCRIPTION
Table 1. Device summary Marking GB14NC60KD GF14NC60KD GP14NC60KD Package D²PAK TO-220FP TO-220 Packaging Tape and reel Tube Tube Order codes STGB14NC60KDT4 STGF14NC60KD STGP14NC60KD March 2010 Doc ID 11424 Rev 7 1/16 16 Contents STGB14NC60KD, STGF14NC60KD, STGP14NC60KD Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ...........................