GF35HF60W Description
This Ultrafast IGBT is developed using a new planar technology to yield a device with tighter switching energy variation (Eoff) versus temperature. The suffix "W" denotes a subset of products designed for high switching frequency operation (over 100 kHz). Internal schematic diagram Table.
GF35HF60W Key Features
- Improved Eoff at elevated temperature
- Minimal tail current
- Low conduction losses