STMicroelectronics GH50H65DWB2-7AG
The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy.| Part No. | GH50H65DWB2-7AG |
|---|---|
| Datasheet | GH50H65DWB2-7AG Download |
| Manufacturer |  STMicroelectronics |
| Description | Automotive-grade 650V 50A high-speed IGBT |
| Buy | Stock & Price |
FEATURES
TAB 7 1 H2PAK-7 C(TAB) G(1) K(2)● AEC-Q101 qualified
● Maximum junction temperature: TJ = 175 °C
● High speed switching series
● Minimized tail current
● Low VCE(sat) = 1.6 V (typ.) @ IC = 50 A
● Tight parameter distribution
● Low thermal resistance
● Positive VCE(sat) temperature coefficient
● Silicon carbide diode with no-reverse recovery charge is co-packaged in freewheeling configuration
● Excellent switching performance thanks to the extra driving kelvin pin Application E(3, 4, 5, 6, 7)
●
● IGBTG1K2E34567CTAB
●
● On board charger (OBC) PFC converter - single phase input LLC resonant converter High frequency converters
DESCRIPTION
Product status link GH50H65DWB2-7AG Product summary Order code GH50H65DWB2-7AG Marking G50H65WB2A Package H²PAK-7 Packing Tape and reel Co-packed with the IGBT a silicon carbide diode has been adopted. The wide bandgap material allows the design of a low VF Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible.
