STMicroelectronics GP100N30
IGBT
| Part No. | GP100N30 |
|---|---|
| Datasheet | GP100N30 Download |
| Manufacturer |  STMicroelectronics |
| Description | IGBT |
| Buy | Stock & Price |
FEATURES
● Optimized for sustain and energy recovery circuits in PDP applications.● State-of-the-art STripFET™ technology
● Peak collector current IRP = 330 A @ TC = 25 °C (see Table 2) 3 2 1 TO-220FP 3 2 1 TO-247
● Very low-on voltage drop (VCE(sat)) and energy per pulse for improved panel efficiency )● High repetitive peak current capability ct(sDescription duAdvanced high-density and high-current IGBT rotechnology with low-drop companion diode Padapted to various functions in PDP sets. 3 2 1 TO-220 Figure 1. Internal schematic diagram lete Product(s) - ObsoleteTable 1. Device summary soOrder codes Ob STGF100N30 Marking GF100N30 Package TO-220FP Packaging Tube STGP100N30 GP100N30 TO-220 Tube STGW100N30 GW100N30 TO-247 Tube February 2009 Rev 1 1/13 13 Contents Contents STGF100N30, STGP100N30, STGW100N30 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . .
