Datasheet4U Logo Datasheet4U.com

GP100N30 - IGBT

General Description

duAdvanced high-density and high-current IGBT rotechnology with low-drop companion diode Padapted to various functions in PDP sets.

Figure 1.

lete Product(s) - ObsoleteTable 1.

Key Features

  • Optimized for sustain and energy recovery circuits in PDP.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
GP100 1 AMP HIGH RELIABILITY SILICON DIODES DIOTEC Electronics Corporation
GP100 PPTC Thermistors Goodpoly
GP1001 Glass Passivated Rectifiers Taiwan Semiconductor
GP1002 Glass Passivated Rectifiers Taiwan Semiconductor
GP1003 Glass Passivated Rectifiers Taiwan Semiconductor

Other Datasheets by STMicroelectronics

Part Number Description
GP10HF60KD short-circuit rugged IGBT
GP10NB37LZ internally clamped IGBT
GP10NB60S low drop IGBT
GP10NB60SD low drop IGBT
GP10NC60HD very fast IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STGF100N30 STGP100N30, STGW100N30 90 A - 330 V - fast IGBT Features ■ Optimized for sustain and energy recovery circuits in PDP applications. ■ State-of-the-art STripFET™ technology ■ Peak collector current IRP = 330 A @ TC = 25 °C (see Table 2) 3 2 1 TO-220FP 3 2 1 TO-247 ■ Very low-on voltage drop (VCE(sat)) and energy per pulse for improved panel efficiency )■ High repetitive peak current capability ct(sDescription duAdvanced high-density and high-current IGBT rotechnology with low-drop companion diode Padapted to various functions in PDP sets. 3 2 1 TO-220 Figure 1. Internal schematic diagram lete Product(s) - ObsoleteTable 1.