STMicroelectronics GP10HF60KD
The rocombination results in a very good trade-off Pbetween conduction losses and switching tebehavior rendering the product ideal for diverse high voltage applications operating at high Obsolefrequencies.| Part No. | GP10HF60KD |
|---|---|
| Datasheet | GP10HF60KD Download |
| Manufacturer |  STMicroelectronics |
| Description | short-circuit rugged IGBT |
| Buy | Stock & Price |
FEATURES
● Low on-voltage drop (VCE(sat))● Operating junction temperature up to 175 °C
● Low Cres / Cies ratio (no cross conduction )susceptibility) t(s● Tight parameter distribution uc● Ultrafast soft-recovery antiparallel diode d● Short-circuit rugged ProApplications lete● Motor drives o● High frequency inverters bs● SMPS and PFC in both hard switch and Oresonant topologies t(s) -
DESCRIPTION
cThis device utilizes the advanced PowerMESH™ uprocess for the IGBT and the Turbo 2 Ultrafast dhigh voltage technology for the diode. 3 2 1 TO-220FP TAB 3 2 1 TO-220 3 1 D²PAK Figure 1. Internal schematic diagram Table 1. Device summary Order codes Marking STGB10HF60KDT4 GB10HF60K
