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GP10HF60KD - short-circuit rugged IGBT

General Description

cThis device utilizes the advanced PowerMESH™ uprocess for the IGBT and the Turbo 2 Ultrafast dhigh voltage technology for the diode.

Key Features

  • Low on-voltage drop (VCE(sat)).
  • Operating junction temperature up to 175 °C.
  • Low Cres / Cies ratio (no cross conduction )susceptibility) t(s.
  • Tight parameter distribution uc.
  • Ultrafast soft-recovery antiparallel diode d.
  • Short-circuit rugged Pro.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STGB10HF60KD STGF10HF60KD, STGP10HF60KD 10 A - 600 V - short-circuit rugged IGBT Features ■ Low on-voltage drop (VCE(sat)) ■ Operating junction temperature up to 175 °C ■ Low Cres / Cies ratio (no cross conduction )susceptibility) t(s■ Tight parameter distribution uc■ Ultrafast soft-recovery antiparallel diode d■ Short-circuit rugged ProApplications lete■ Motor drives o■ High frequency inverters bs■ SMPS and PFC in both hard switch and Oresonant topologies t(s) -Description cThis device utilizes the advanced PowerMESH™ uprocess for the IGBT and the Turbo 2 Ultrafast dhigh voltage technology for the diode.