Datasheet4U Logo Datasheet4U.com

GP10NB60SD - low drop IGBT

General Description

This IGBT utilizes the advanced Power MESH™ process featuring extremely low on-state voltage drop in low-frequency working conditions (up to 1 kHz).

Figure 1.

Table 1.

Key Features

  • Low on-voltage drop (VCE(sat)).
  • High current capability.
  • Very soft ultra fast recovery antiparallel diode.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
GP10N GLASS PASSIVATED JUNCTION RECTIFIER General Semiconductor
GP10N SINTERED GLASS PASSIVATED JUNCTION RECTIFIER Zowie Technology Corporation
GP10N Glass Passivated Junction Rectifiers GOOD-ARK
GP10N Glass Passivated Junction Rectifier Vishay Siliconix
GP10N GLASS PASSIVATED JUNCTION SILICON RECTIFIERS EIC

Other Datasheets by STMicroelectronics

Part Number Description
GP10NB60S low drop IGBT
GP10NB37LZ internally clamped IGBT
GP10NC60HD very fast IGBT
GP10NC60KD short-circuit rugged IGBT
GP10NC60S fast IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STGF10NB60SD STGP10NB60SD 16 A, 600 V, low drop IGBT with soft and fast recovery diode Features ■ Low on-voltage drop (VCE(sat)) ■ High current capability ■ Very soft ultra fast recovery antiparallel diode Applications ■ Light dimmer ■ Static relays ■ Motor drive Description This IGBT utilizes the advanced Power MESH™ process featuring extremely low on-state voltage drop in low-frequency working conditions (up to 1 kHz). TAB 3 2 1 TO-220FP 3 2 1 TO-220 Figure 1. Internal schematic diagram Table 1. Device summary Order codes Marking STGF10NB60SD STGP10NB60SD GF10NB60SD GP10NB60SD Package TO-220FP TO-220 September 2011 Doc ID 11860 Rev 3 Packaging Tube Tube 1/15 www.st.com 15 Contents Contents STGF10NB60SD, STGP10NB60SD 1 Electrical ratings . . . . . . . . . . . . . . . . .