GP10NB60SD Description
This IGBT utilizes the advanced Power MESH™ process featuring extremely low on-state voltage drop in low-frequency working conditions (up to 1 kHz). TAB 3 2 1 TO-220FP 3 2 1 TO-220 Figure 1. Internal schematic diagram Table.
GP10NB60SD Key Features
- Low on-voltage drop (VCE(sat))
- High current capability
- Very soft ultra fast recovery antiparallel diode