GP18N40LZ Overview
Description
This application-specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gateemitter provide overvoltage protection capabilities.
Key Features
- Designed for automotive applications and AEC-Q101 qualified
- 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH
- ESD gate-emitter protection
- Gate-collector high voltage clamping
- Logic level gate drive
- Low saturation voltage
- High pulsed current capability
- Gate and gate-emitter resistor Figure
- Internal C (2 or TAB)
