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GP19NC60K - short circuit rugged IGBT

Description

lebetween switching performance and low on-state sobehavior.

Figure 1.

lete Product(s) - ObTable 1.

Features

  • Low on-voltage drop (VCE(sat)).
  • Low Cres / Cies ratio (no cross conduction susceptibility).
  • Short circuit withstand time 10 µs.
  • IGBT co-packaged with ultra fast free-wheeling 3 2 3 1 diode ).

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STGB19NC60K STGP19NC60K 20 A - 600 V - short circuit rugged IGBT Features ■ Low on-voltage drop (VCE(sat)) ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Short circuit withstand time 10 µs ■ IGBT co-packaged with ultra fast free-wheeling 3 2 3 1 diode )Applications t(s■ High frequency inverters uc■ Motor drivers rodDescription te PThis IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off lebetween switching performance and low on-state sobehavior. 1 TO-220 D2PAK Figure 1. Internal schematic diagram lete Product(s) - ObTable 1. Device summary soOrder codes Marking ObSTGB19NC60KT4 GB19NC60K Package D2PAK Packaging Tape and reel STGP19NC60K GP19NC60K TO-220 Tube May 2008 Rev 2 1/15 www.st.
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