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GP8NC60K - IGBT

Datasheet Summary

Description

PUsing the latest high voltage technology based on tea patented strip layout, STMicroelectronics has ledesigned an advanced family of IGBTs, the oPowerMESH™ IGBTs, with outstanding sperformances.

Features

  • Type VCES VCE(sat)Typ @25°C IC @100°C STGB8NC60K t(s)STGD8NC60K STGP8NC60K 600V 600V 600V 2.2V 2.2V 2.2V 8A 8A 8A duc.
  • Lower on voltage drop (Vcesat) ro.
  • Lower CRES / CIES ratio (no cross-conduction Psusceptibility) te.
  • Very soft ultra fast recovery antiparallel diode le.
  • Short circuit withstand time 10µs bso.

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Full PDF Text Transcription

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STGB8NC60K - STGD8NC60K STGP8NC60K N-channel 600V - 8A - D2PAK / DPAK / TO-220 Short circuit rated PowerMESH™ IGBT Features Type VCES VCE(sat)Typ @25°C IC @100°C STGB8NC60K t(s)STGD8NC60K STGP8NC60K 600V 600V 600V 2.2V 2.2V 2.2V 8A 8A 8A duc■ Lower on voltage drop (Vcesat) ro■ Lower CRES / CIES ratio (no cross-conduction Psusceptibility) te■ Very soft ultra fast recovery antiparallel diode le■ Short circuit withstand time 10µs bsoApplications O■ High frequency motor controls ) -■ SMPS and PFC in both hard switch and t(sresonant topologies c■ Motor drivers roduDescription PUsing the latest high voltage technology based on tea patented strip layout, STMicroelectronics has ledesigned an advanced family of IGBTs, the oPowerMESH™ IGBTs, with outstanding sperformances.
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