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GW40NC60KD - 40A - 600V - short circuit rugged IGBT

General Description

This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.

Table 1.

Key Features

  • Low on-voltage drop (VCE(sat)).
  • Low Cres / Cies ratio (no cross conduction susceptibility).
  • Short-circuit withstand time 10 µs 2 1 3.
  • IGBT co-packaged with ultra fast free-wheeling diode TO-247.

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Other Datasheets by STMicroelectronics

Part Number Description
GW40NC60V N-CHANNEL IGBT
GW40N120KD STGW40N120KD

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STGW40NC60KD 600 V, 40 A short-circuit rugged IGBT Datasheet - production data Features • Low on-voltage drop (VCE(sat)) • Low Cres / Cies ratio (no cross conduction susceptibility) • Short-circuit withstand time 10 µs 2 1 3 • IGBT co-packaged with ultra fast free-wheeling diode TO-247 Applications • High frequency inverters • Motor drivers Figure 1. Internal schematic diagram Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Table 1. Device summary Order code STGW40NC60KD Marking GW40NC60KD Package TO-247 Packaging Tube March 2014 This is information on a product in full production. DocID14807 Rev 2 1/13 www.st.