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GWA75H65DRFB2AG - Automotive-grade trench gate field-stop IGBT

Description

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure.

The performances are optimized both in conduction and switching energies for hard switching application.

Features

  • TO-247 long leads C(2, TAB) G(1) E(3) NG1E3C2T.
  • AEC-Q101 qualified.
  • Maximum junction temperature: TJ = 175 °C.
  • Low VCE(sat) = 1.6 V (typ. ) @ IC = 75 A.
  • Co-packed with high ruggedness rectifier diode.
  • Minimized tail current.
  • Tight parameter distribution.
  • Low thermal resistance.
  • Positive VCE(sat) temperature coefficient.

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GWA75H65DRFB2AG Datasheet Automotive-grade trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO‑247 long leads package Features TO-247 long leads C(2, TAB) G(1) E(3) NG1E3C2T • AEC-Q101 qualified • Maximum junction temperature: TJ = 175 °C • Low VCE(sat) = 1.6 V (typ.) @ IC = 75 A • Co-packed with high ruggedness rectifier diode • Minimized tail current • Tight parameter distribution • Low thermal resistance • Positive VCE(sat) temperature coefficient Applications • DC/DC converter for EV/HEV • On board charger (OBC) Description The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performances are optimized both in conduction and switching energies for hard switching application.
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