GWA75H65DRFB2AG Datasheet Automotive-grade trench gate field-stop IGBT

Manufacturer: STMicroelectronics

Overview: GWA75H65DRFB2AG Datasheet Automotive-grade trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO‑247 long leads.

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Datasheet Details

Part number	GWA75H65DRFB2AG
Manufacturer	STMicroelectronics
File Size	640.40 KB
Description	Automotive-grade trench gate field-stop IGBT
Download	GWA75H65DRFB2AG Download (PDF)

General Description

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure.

The performances are optimized both in conduction and switching energies for hard switching application.

In this configuration, it has been co-packed with a high ruggedness rectifier diode targeting heavy duty and high reliability automotive applications.

Key Features

TO-247 long leads C(2, TAB) G(1) E(3) NG1E3C2T.
AEC-Q101 qualified.
Maximum junction temperature: TJ = 175 °C.
Low VCE(sat) = 1.6 V (typ. ) @ IC = 75 A.
Co-packed with high ruggedness rectifier diode.
Minimized tail current.
Tight parameter distribution.
Low thermal resistance.
Positive VCE(sat) temperature coefficient.

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