GWA75H65DRFB2AG Description
The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performances are optimized both in conduction and switching energies for hard switching application. In this configuration, it has been co-packed with a high ruggedness rectifier diode targeting heavy duty and high reliability automotive applications.
GWA75H65DRFB2AG Key Features
- AEC-Q101 qualified
- Maximum junction temperature: TJ = 175 °C
- Low VCE(sat) = 1.6 V (typ.) @ IC = 75 A
- Co-packed with high ruggedness rectifier diode
- Minimized tail current
- Tight parameter distribution
- Low thermal resistance
- Positive VCE(sat) temperature coefficient
GWA75H65DRFB2AG Applications
- DC/DC converter for EV/HEV