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H10NC60FI Datasheet PDF

STMicroelectronics H10NC60FI

The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.
Part No. H10NC60FI
Datasheet H10NC60FI Download
Manufacturer
STMicroelectronics
Description STH10NC60FI
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H10NC60FI datasheet page 1 preview

DESCRIPTION

APPLICATIONS

HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER s ISOWATT218 INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol VDS VDGR VGS ID ID IDM (1) PTOT dv/dt VISO Tstg Tj . Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature 10 6.3 40 160 1.28 Value STW10NC60 600 600 ±30 10 (*) 6.3 (*) 40 (*) 60 0.48 3.5 2500 – 55 to 150 (1)ISD ≤ 10A, di/dt ≤100A/µs, V DD ≤ V(BR)DSS, Tj ≤ TJMAX (*) Limited only by Maximum Temperature Allowed Unit V V V A A A W W/°C V/ns V °C STH10NC60FI (●)Pulse width limited by safe operating area February 2002 1/9 STW...
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