STMicroelectronics H12NA60
This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.| Part No. | H12NA60 |
|---|---|
| Datasheet | H12NA60 Download |
| Manufacturer |  STMicroelectronics |
| Description | STH12NA60 |
| Buy | Stock & Price |
DESCRIPTION
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVEABSOLUTE MAXIMUM RATINGS
Symbol P ar amete r VD S Drain-source Voltage (VGS = 0) VDG R Drain- gate Voltage (RGS = 20 kΩ) VGS Gate-source Voltage ID Drain Current (continuous) at T c = 25 oC ID Drain Current (continuous) at T c = 100 oC IDM(●) Drain Current (pulsed) Ptot Total Dissipation at Tc = 25 oC Derating Factor VISO Insulation Withstand Voltage (DC) Tstg Storage Temperature Tj Max. Operating Junction Temperature (●) Pulse width limited by safe operating area November 1996 TO-247 3 2 1 TO-218 33 22 1 1 ISOWATT218 INTERNAL SCHEMATIC DIAGRAM Val ue STH/STW12NA60 STH12NA60FI 600 600 ± 30 12 7 7.6 4.4 48 48 190 80 1. 52 0. 64 4000 -65 to 150 150 Unit V V V A A A W W/oC V oC oC 1/11 STH12NA60/FI - STW12NA60 THERMAL DATA Rthj-case Rthj- amb Rt hc- sin k Tl TO-218/TO-247 ISOWATT218 Thermal Resistanc...
