Datasheet Details
| Part number | H12NA60 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 227.99 KB |
| Description | STH12NA60 |
| Download | H12NA60 Download (PDF) |
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Overview: STH12NA60/FI STW12NA60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STH12NA60 STH12NA60FI STW12NA60 VDSS 600 V 600 V 600 V R DS( on) < 0.6 Ω < 0.6 Ω < 0.6 Ω ID 12 A 7A 12 A s TYPICAL RDS(on) = 0.
| Part number | H12NA60 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 227.99 KB |
| Description | STH12NA60 |
| Download | H12NA60 Download (PDF) |
|
|
|
This series of POWER MOSFETS represents the most advanced high voltage technology.
The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol P ar amete r VD S Drain-source Voltage (VGS = 0) VDG R Drain- gate Voltage (RGS = 20 kΩ) VGS Gate-source Voltage ID Drain Current (continuous) at T c = 25 oC ID Drain Current (continuous) at T c = 100 oC IDM(•) Drain Current (pulsed) Ptot Total Dissipation at Tc = 25 oC Derating Factor VISO Insulation Withstand Voltage (DC) Tstg Storage Temperature Tj Max.
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