H32N65DM6 Datasheet N-channel Power MOSFET

Manufacturer: STMicroelectronics

Overview: SH32N65DM6AG Datasheet Automotive-grade N-channel 650 V, 89 mΩ typ.

H32N65DM6 n-channel power mosfet by STMicroelectronics - Datasheet Preview

Datasheet Details

Part number	H32N65DM6
Manufacturer	STMicroelectronics
File Size	471.55 KB
Description	N-channel Power MOSFET
Download	H32N65DM6 Download (PDF)

General Description

This device combines two MOSFETs in a half-bridge topology.

The ACEPACK SMIT is a very compact and rugged power module in a surface mount package for easy assembly.

Thanks to the DBC substrate, the ACEPACK SMIT package offers low thermal resistance coupled with an isolated top-side thermal pad.

Key Features

Order code SH32N65DM6AG VDS 650 V RDS(on) max. 97 mΩ ID 32 A.
AQG 324 qualified.
Half-bridge power module.
650 V blocking voltage.
Fast recovery body diode.
Very low switching energies.
Low package inductance.
Dice on direct bond copper (DBC) substrate.
Low thermal resistance.
Isolation rating of 3.4 kVrms/min.

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