H32N65DM6 Datasheet | STMicroelectronics

Features Order code SH32N65DM6AG VDS 650 V RDS(on) max. 97 mΩ ID 32 A - AQG 324 qualified - Half-bridge power module - 650 V blocking voltage - Fast recovery body diode - Very low switching energies - Low package inductance - Dice on direct bond copper (DBC) substrate - Low thermal resistance - Isolation rating of 3.4 k Vrms/min Applications - Switching applications Description This device bines two MOSFETs in a half-bridge topology. The ACEPACK SMIT is a very pact and rugged power module in a surface mount package for easy assembly. Thanks to the DBC substrate, the ACEPACK SMIT package offers low thermal resistance coupled with an isolated top-side thermal pad. The high design flexibility of the package enables several configurations, including phase legs, boost, and single switch through different binations of the internal power switches. Product status link SH32N65DM6AG Product summary Order code SH32N65DM6AG Marking Package ACEPACK SMIT Packing Tape and reel DS14049 - Rev 2 - October 2022 For further information contact your local STMicroelectronics sales office. .st. SH32N65DM6AG Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Gate-source...