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H32N65DM6

Manufacturer: STMicroelectronics
H32N65DM6 datasheet preview

Datasheet Details

Part number H32N65DM6
Datasheet H32N65DM6-STMicroelectronics.pdf
File Size 471.55 KB
Manufacturer STMicroelectronics
Description N-channel Power MOSFET
H32N65DM6 page 2 H32N65DM6 page 3

H32N65DM6 Overview

This device bines two MOSFETs in a half-bridge topology. The ACEPACK SMIT is a very pact and rugged power module in a surface mount package for easy assembly. Thanks to the DBC substrate, the ACEPACK SMIT package offers low coupled with an isolated top-side thermal pad.

H32N65DM6 Key Features

  • AQG 324 qualified
  • Half-bridge power module
  • 650 V blocking voltage
  • Fast recovery body diode
  • Very low switching energies
  • Low package inductance
  • Dice on direct bond copper (DBC) substrate
  • Low thermal resistance
  • Isolation rating of 3.4 kVrms/min
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