H8NB90FI Datasheet PDF | STMicroelectronics

STMicroelectronics H8NB90FI

The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest R DS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

Part No.	H8NB90FI
Datasheet	H8NB90FI Download
Manufacturer	STMicroelectronics
Description	STH8NB90FI
Buy	Stock & Price

DESCRIPTION

Using the latest high voltage MESH OVERLAY ™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.

APPLICATIONS

s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT

ABSOLUTE MAXIMUM RATINGS

Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt (1) VISO Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature ISOWATT218 INTERNAL SCHEMATIC DIAGRAM Value STW8NB90 900 900 ±30 8 5 32 200 1.6 4 –65 to 150 150 2500 5 3 20 80 0.64 STH8NB90FI Unit V V V A A A W W/°C V/ns V °C °C (●)Pulse width limited by safe operating area (1)ISD ≤8 A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, T j ≤ TJMAX.