HD1750FX
DESCRIPTION
The device is manufactured using Diffused Collector in Planar technology adopting "Enhance High Voltage Structure" (EHVS1) developed to fit High-Definition CRT displays. The new HD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage.
Table 1: Order Codes
Part Number HD1750FX Marking HD1750FX Package ISOWATT218FX Packaging TUBE
December 2005
Rev. 2
1/8
..
Table 2: Absolute Maximum Ratings
Symbol VCES VCEO VEBO IC ICM IB IBM Ptot Vins Tstg TJ Parameter Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage (IB= 0) Emitter-Base Voltage (IC= 0) Collector Current Collector Peak Current (tp < 5ms) Base Current Base Peak Current (tp < 5ms) Total Dissipation at TC = 25 C Insulation Withstand Voltage (RMS) from All Three Leads to External Heatsink Storage Temperature Max. Operating Junction Temperature o
Value 1700 800 10 24 36 12 18 75 2500 -65 to 150 150
Unit V V V A A A A W V °C °C
Table 3:...
