STMicroelectronics HD1760JL
The HD1760JL is manufactured using Diffused Collector in Planar technology adopting new and Enhanced High Voltage Structure 1 (E.H.V.S.1) developed to fit High-Definition CRT display. The new HD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage.| Part No. | HD1760JL |
|---|---|
| Datasheet | HD1760JL Download |
| Manufacturer |  STMicroelectronics |
| Description | Very high voltage NPN power transistor |
| Buy | Stock & Price |
FEATURES
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● State-of-the-art technology: diffused collector “enhanced generation“ EHVS1 Wide range of optimum drive conditions Stable performance versus operating temperature variation 3
APPLICATIONS
● High-definition and slim CRT TV and monitors 1 2DESCRIPTION
TO-264 Internal schematic diagram Table 1. Device summary Marking HD1760JL Package TO-264 Packaging Tube Part number HD1760JL June 2007 Rev 3 1/10 10 Electrical ratings HD1760JL 1 Electrical ratings Table 2. Symbol VCES VCEO VEBO IC ICM IB IBM PTOT TSTG TJ Absolute maximum rating Parameter Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) Emitte-base voltage (IC = 0) Collector current Collector peak current (tP < 5ms) Base current Base peak current (tP < 5ms) Total dissipation at Tc = 25°C Storage temperature Max. operating junction temperature Value 1700 800 10 36 54 18 27 200 -55 to 150 150 Unit V V V A A A A W °C °C Table 3. Symbol RthJC Thermal data Parameter Thermal resistance junction case_________...
