HSP181-2W3Y Datasheet | STMicroelectronics

Features 3 2 1 SOT323-3L (Jedec TO-236) 1 3 Functional diagram Product status link HSP181-2W3Y Product summary Order code Marking H8Y Package SOT323-3L Packing Tape and reel - AEC-Q101 qualified - Flow-through routing to keep signal integrity - Large bandwidth: 1.7 GHz - Ultra low capacitance: 2.1 p F - Operating junction temperature range: -55 °C to 150 °C - Ro HS pliant and halogen free - plies with ISO ISO 10605 / IEC 61000-4-2 - C = 150 p F, R = 330 Ω exceeds level 4 - ±12 k V (contact discharge) - ±30 k V (air discharge) - plies with ISO 10605 - C = 330 p F, R = 330 Ω - ±10 k V (contact discharge) - ±30 k V (air discharge) - plies with ISO 10605 - C = 330 p F, R = 2 kΩ - ±30 k V (contact discharge) - ±30 k V (air discharge) Application - USB 1.1 and USB2.0 - NFC - Other high speed signals Description The HSP181-2W3Y is an ESD array designed for high-speed differential lines. The VRM at 18 V makes it patible with a short-to-battery hazard in vehicles. The HSP181-2W3Y is also patible with the maximum signal voltage (18 V) on the antenna of NFC readers and can thus efficiently protect NFC antenna I/O of NFC ICs. The 2.1 p F low parasitic capacitance and the 1.7 GHz bandwidth provides enough room to preserve the signal integrity of USB 2.0 or NFC signals. The HSP181-2W3Y is housed in SOT323-3L. DS13792...