IPN1M50T-H
Features
- IPM 1 A, 500 V, RDS(on)= 3.6 Ω, 3-phase MOSFET inverter bridge including control ICs for gate driving
- Optimized for low electromagnetic interference
- 3.3 V, 5 V, 15 V CMOS/TTL input parators with hysteresis and pulldown/pull-up resistors
- Undervoltage lockout
- Internal bootstrap diode
- Interlocking function
- Smart shutdown function
- parator for fault protection against overtemperature and overcurrent
- Op-amp for advanced current sensing
- Optimized pinout for easy board layout
- NTC for temperature control
(UL 1434 CA 2 and 4)
- Up to ±2 k V ESD protection
(HBM C = 100 p F, R = 1.5 kΩ)
Description
This SLLIMM (small low-loss intelligent molded module) nano provides a pact, high performance AC motor drive in a simple, rugged design. It is posed of six MOSFETs and three half-bridge HVICs for gate driving, providing low electromagnetic interference (EMI) characteristics with optimized switching speed. The package is optimized for thermal performance and pactness in...
