IPN2M50T-H Description
It is posed of six MOSFETs and three half-bridge HVICs for gate driving, providing low electromagnetic interference (EMI) characteristics with optimized switching speed. The package is optimized for thermal performance and pactness in built-in motor applications, or other low power applications where assembly space is limited. This IPM includes an operational amplifier, pletely unmitted, and a parator that can be...
IPN2M50T-H Key Features
- IPM 2 A, 500 V, RDS(on) = 1.7 Ω, 3-phase MOSFET inverter bridge including control ICs for gate driving
- Optimized for low electromagnetic interference
- 3.3 V, 5 V, 15 V CMOS/TTL input parators with hysteresis and pulldown/pull-up resistors
- Undervoltage lockout
- Internal bootstrap diode
- Interlocking function
- Smart shutdown function
- parator for fault protection against
- Op-amp for advanced current sensing
- Optimized pinout for easy board layout