STMicroelectronics IRF451
N-Channel MOSFET
| Part No. | IRF451 |
|---|---|
| Datasheet | IRF451 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
APPLICATIONS
:● SWITCHING POWER SUPPLIES
● MOTOR CONTROLS INTERNAL SCHEMATIC DIAGRAM N - channel enhancement mode POWER MOS field effect transistors. Easy drive and very fast switch- ing times make these POWER MOS transistors ideal for high speed switching applications. Typi- cal applications include switched mode power sup- plies, uninterruptable power supplies_ and motor 5 speed control.
ABSOLUTE MAXIMUM RATINGS
450 Vos * Drain-source voltage (VGS =0) 500 VOGR * Drain-gate voltage (RGS =20 KO) 500 VGS Gate-source voltage 10 Drain current (cont.) at Tc =25°C 13 10 Drain current (cont.) at Tc = 100°C 8.1 10M(e) Drain current (pulsed) 52 10LM Drain inductive current, clamped (L = 100 /LH) 52 Ptot Total dissipation at Tc < 25°C Derating factor Storage temperature Max. operating junction temperature * T- = 25°C to 125°C (e) Aepetitive Rating: Pulse width limited by max junction temperature June 1988 IRF 451 452 450 500 450 500 ±20 13 11 8.1 7.2 52 44 52 44 150 1.2 -55 to 150 150 453 450 V...
