IRF523 Datasheet | STMicroelectronics

IRF 520/FI-521/FI IRF 522/FI-523/FI - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF520 IRF520FI IRF521 IRF521FI IRF522 IRF522FI IRF523 IRF523FI Voss 100 V 100 V 80 V 80 V 100 V 100 V 80 V 80 V Ros(on) 0.270 0.270 0.270 0.27 0 0.36 0 0.36 0 0.36 0 0.36 0 - 9.2 A 7A 9.2 A 7A 8A 6A 8A 6A e 80-1 00 VOLTS - FOR DC/DC CONVERTERS e HIGH CURRENT e RATED FOR UNCLAMPED INDUCTIVE SWITCHING (ENERGY TEST) - e ULTRA FAST SWITCHING e EASY DRIVE- FOR REDUCED COST AND SIZE INDUSTRIAL APPLICATIONS: e UNINTERRUPTIBLE POWER SUPPLIES e MOTOR CONTROLS - channel enhancement mode POWER MOS field effect transistors. Easy drive and very fast switching times make these POWER MOS transistors ideal for high speed switching applications. Applications include DCIDC converters, UPS, battery chargers, secondary regulators, servo control, power-audio amplifiers and robotics. TO-220 ISOWATT220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS TO-220 ISOWATT220 IRF 520 521 522 520FI 521FI 522FI 523 523FI - VOGR - VGS 10M (e) Drain-source voltage (VGS = 0) Draili-gate voltage (RGs = 20 KO) Gate-source voltage Drain current...