STMicroelectronics IRF523FI
N-Channel MOSFET
| Part No. | IRF523FI |
|---|---|
| Datasheet | IRF523FI Download |
| Manufacturer |  STMicroelectronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
APPLICATIONS
: e UNINTERRUPTIBLE POWER SUPPLIES e MOTOR CONTROLS N - channel enhancement mode POWER MOS field effect transistors. Easy drive and very fast switching times make these POWER MOS transistors ideal for high speed switching applications.APPLICATIONS
include DCIDC converters, UPS, battery chargers, secondary regulators, servo control, power-audio amplifiers and robotics. TO-220 ISOWATT220 INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
TO-220 ISOWATT220 IRF 520 521 522 520FI 521FI 522FI 523 523FI VOS * VOGR * VGS 10M (e) Drain-source voltage (VGS = 0) Draili-gate voltage (RGs = 20 KO) Gate-source voltage Drain current (pulsed) 10 Drain current (cant.) at Tc= 25°C 10 Drain current (cant.) at Tc= 100°C Drain current (cant.) at Tc = 25°C Drain current (cant.) at Tc= 100°C -Ptot - Tstg T Total dissipation at Tc <25°C Derating factor Storage temperature Max. operating junction temperature -100 80 100 80 100 80 100 80 ±20 37 37 32 32 520 521 522 523 9.2 9.2 8 8 6.5 6.5 5.6 5.6...
