STMicroelectronics IRF623FI
N-Channel MOSFET
| Part No. | IRF623FI |
|---|---|
| Datasheet | IRF623FI Download |
| Manufacturer |  STMicroelectronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
APPLICATIONS
e ULTRA FAST SWITCHING e RATED FOR UNCLAMPED INDUCTIVE SWITCHING (ENERGY TEST)● e EASY DRIVE - REDUCES COST AND SIZE TO-220 ISOWATT220 INDUSTRIAL
APPLICATIONS
: e SWITCHING MODE POWER SUPPLIES e DC SWITCH e ROBOTCS N-channel enhancement mode POWER MaS field effect transistors. Easy drive and very fast switching times make these POWER MaS transistors ideal for high speed switching applications. Typical uses are in telecommunications, robotics, switching power supplies and as a DC switch. G~ INTERNAL SCHEMATIC DIAGRAM 5ABSOLUTE MAXIMUM RATINGS
TO-220 ISOWATT220 IRF 620 621 622 620FI 621FI 622FI 623 623FI VOS * VOGR * VGS 10M (e) Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20 KO) Gate-source voltage Drain current (pulsed) 10 Drain current (cont.) at Tc = 25°C 10 Drain current (cont.) at Tc = 100°C Drain current (cont.) at Tc= 25°C Drain current (cont.) at Tc= 100°C Ptot T stg T● Total dissipation at Tc <25°C Derating factor Storage temperature Max. operating jun...
