IRF623FI Datasheet | STMicroelectronics

IRF 620/FI-621/FI IRF 622/FI-623/FI - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF620 IRF620FI IRF621 IRF621FI IRF622 IRF622FI IRF623 IRF623FI Voss 200 V 200 V 150 V 150 V 200 V 200 V 150 V 150 V Ros(on) 0.8 0 0.8 0 0.80 0.8 0 1.2 0 1.2 0 1.2 0 1.2 0 - 5A 4A 5A 4A 4A 3.5 A 4A 3.5 A e 200V FOR TELEMUNICATION APPLICATIONS e ULTRA FAST SWITCHING e RATED FOR UNCLAMPED INDUCTIVE SWITCHING (ENERGY TEST) - e EASY DRIVE - REDUCES COST AND SIZE TO-220 ISOWATT220 INDUSTRIAL APPLICATIONS: e SWITCHING MODE POWER SUPPLIES e DC SWITCH e ROBOTCS N-channel enhancement mode POWER Ma S field effect transistors. Easy drive and very fast switching times make these POWER Ma S transistors ideal for high speed switching applications. Typical uses are in telemunications, robotics, switching power supplies and as a DC switch. G~ INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS TO-220 ISOWATT220 IRF 620 621 622 620FI 621FI 622FI 623 623FI - VOGR - VGS 10M (e) Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20 KO) Gate-source voltage Drain current...