IRF630FP Description
This power MOSFET is designed using the pany’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances pared with standard parts from various sources. 14 Contents Contents IRF630 - IRF630FP 1 Electrical ratings.
IRF630FP Key Features
- Extremely high dv/dt capability
- Very low intrinsic capacitances
- Gate charge minimized