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IRF630FP - N-CHANNEL MOSFET

General Description

This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process.

This technology matches and improves the performances compared with standard parts from various sources.

Switching application 3 2 1 TO-220 3 2 1 TO-220FP Internal schemati

Key Features

  • Type IRF630 IRF630FP VDSS 200V 200V RDS(on).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRF630 IRF630FP N-channel 200V - 0.35Ω - 9A TO-220/TO-220FP Mesh overlay™ II Power MOSFET General features Type IRF630 IRF630FP VDSS 200V 200V RDS(on) <0.40Ω <0.40Ω ■ Extremely high dv/dt capability ■ Very low intrinsic capacitances ■ Gate charge minimized ID 9A 9A Description This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources. Applications ■ Switching application 3 2 1 TO-220 3 2 1 TO-220FP Internal schematic diagram Order codes Part number IRF630 IRF630FP August 2006 Marking IRF630 IRF630FP Package TO-220 TO-220FP Rev 9 Packaging Tube Tube 1/14 www.st.