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IRF630MFP Datasheet PDF

STMicroelectronics IRF630MFP

This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and INTERNAL SCHEMATIC DIAGRAM improves the performances compared with standard parts from various sources.
Part No. IRF630MFP
Datasheet IRF630MFP Download
Manufacturer
STMicroelectronics
Description N-Channel Power MOSFET
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IRF630MFP datasheet page 1 preview

DESCRIPTION

Isolated TO-220 option simplifies assembly and cuts risk of accidental short circuit in crowded monitor PCB’s. DataSheet4U.com .

APPLICATIONS

s MONITOR DISPLAYS s GENERAL PURPOSE SWITCH DataSh ee

ABSOLUTE MAXIMUM RATINGS

Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt (1) VISO Tstg Tj Parameter IRF630M Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Winthstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature 9 5.7 36 75 0.6 5 -–65 to 150 150 (1)ISD ≤9A, di/dt ≤300A/µs, V DD ≤ V(BR)DSS, Tj ≤ TJMAX. (**) Limited only by Maximum Temperature Allowed Value IRF630MFP 200 200 ± 20 9 (**) 5.7 (**) 36 30 0.24 5 2500 Unit V V V A A A W W/°C V/ns V °C °C (●)Pulse width limited by safe operating area October 2001 1/9 DataSheet4U.com DataSheet4...
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