IRFP151 Datasheet | STMicroelectronics

IRFP 150/FI-151/FI IRFP 152/FI-153/FI - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRFP150 IRFP150FI IRFP151 IRFP151FI IRFP152 IRFP152FI IRFP153 IRFP153FI Voss 100 V 100 V 60 V 60 V 100 V 100 V 60 V 60 V ROS(on) 0.055 n 0.055 n 0.055 n 0.055 n 0.08 n 0.08 n 0.08 n 0.08 n 10 40 A 26 A 40 A 26 A 34 A 21 A 34 A 21 A e 60 - 100 V FOR DC/DC CONVERTERS e HIGH CURRENT e RATED FOR UNCLAMPED INDUCTIVE SWITCHING (ENERGY TEST) - e ULTRA FAST SWITCHING e EASY DRIVE - FOR REDUCES COST AND SIZE INDUSTRIAL APPLICATIONS: e UNINTERRUPTIBLE POWER SUPPLIES e MOTOR CONTROLS - channel enhancement mode POWER MOS field effect transistors. Easy drive and very fast switching times make these POWER MOS transistors ideal for high speed switching applications. Applications include DC/DC converters, UPS, battery chargers, secondary regulators, servo control, power audio amplifiers and robotics. TO-218 ISOWATT218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS TO-218 ISOWATT218 IRFP 150 151 152 150FI 151FI 152FI 153 153FI Vos - VOGR - VGS 10M (e) Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20 Kn) Gate-source voltage Drain current (pulsed) 60...