IRFP450FI datasheet by STMicroelectronics.
| Part number | IRFP450FI |
|---|---|
| Datasheet | IRFP450FI-STMicroelectronics.pdf |
| File Size | 241.55 KB |
| Manufacturer | STMicroelectronics |
| Description | N-Channel MOSFET |
|
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Unit V µA µA nA Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 Gate-body Leakage Current (V D S = 0) V GS = ± 20 V T c = 125 oC ON (∗ ) Symbol V G S(th) R DS( on) I D( on) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance On State Drain Current V GS = 10 V Test Conditions ID = 250 µ A I D = 7.9 A VG S = 10 V 14 Min. 4 0.4 Unit V Ω A V DS > ID( on) x...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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IRFP450 | N-Channel MOSFET Transistor | Inchange Semiconductor |
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IRFP450 | Power MOSFET | International Rectifier |
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IRFP450 | N-Channel Power MOSFET | Intersil Corporation |
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IRFP450 | N-Channel Power MOSFET | ST Microelectronics |
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IRFP450 | Power MOSFET | Vishay |
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