Description
The ISB35000 array series uses a high performance, low voltage, triple level metal, HCMOS 0.5 micron process to achieve sub-nanosecond internal speeds while offering very low power dissipation and high noise immunity.
Features
- 0.5 micron triple layer metal HCMOS process featuring retrograde well technology, low resistance salicided active areas, polysilicide gates and thin metal oxide. 3.3 V optimized transistor with 5 V I/O interface capability 2 - input NAND delay of 0.210 ns (typ) with fanout = 2. Broad I/O functionality including LVCMOS, LVTTL, GTL, PECL, and LVDS. High drive I/O; capability of sinking up to 48 mA with slew rate control, current spike suppression and impedance matching. Metallised generators to su.
ISB35000 Datasheet
