ISB35000 - HCMOS STRUCTURED ARRAY

This page provides the datasheet information for the ISB35000, a member of the ISB HCMOS STRUCTURED ARRAY family.

Product Overview

STMicroelectronics

Datasheet Details

Part number	ISB35000
Manufacturer	STMicroelectronics
File Size	345.59 KB
Description	HCMOS STRUCTURED ARRAY
Datasheet	ISB35000 Datasheet
Additional preview pages of the ISB35000 datasheet.

ISB35000 Product details

Description

The ISB35000 array series uses a high performance, low voltage, triple level metal, HCMOS 0.5 micron process to achieve sub-nanosecond internal speeds while offering very low power dissipation and high noise immunity.

The potential total gate count ranges above 1 million equivalent usable gates.

Features

0.5 micron triple layer metal HCMOS process featuring retrograde well technology, low resistance salicided active areas, polysilicide gates and thin metal oxide. 3.3 V optimized transistor with 5 V I/O interface capability 2 - input NAND delay of 0.210 ns (typ) with fanout = 2. Broad I/O functionality including LVCMOS, LVTTL, GTL, PECL, and LVDS. High drive I/O; capability of sinking up to 48 mA with slew rate control, current spike suppression and impedance matching. Metallised generators to su.

📁 Similar Datasheet

ISB-A27-0 - N-channel MOSFET Array (Sanyo)
ISB-A40-0 - Reverse-Current Flow Prevention (Sanyo)
ISB-E48-0 - Charger Circuit Voltage Sensor + 3 P-channel MOSFETs (Sanyo)
ISB-E48-1 - Charger Circuit Voltage Sensor + 3 P-channel MOSFETs (Sanyo)
ISB-TS45D - Infrared Thermopile Sensor (Senba Sensing)

Other Datasheets by STMicroelectronics

ISB35083 - HCMOS STRUCTURED ARRAY
ISB35130 - HCMOS STRUCTURED ARRAY
ISB35166 - HCMOS STRUCTURED ARRAY
ISB35208 - HCMOS STRUCTURED ARRAY
ISB35279 - HCMOS STRUCTURED ARRAY
ISB35389 - HCMOS STRUCTURED ARRAY
ISB35484 - HCMOS STRUCTURED ARRAY
ISB35666 - HCMOS STRUCTURED ARRAY

Published: Apr 7, 2005 |