STMicroelectronics L100NH3LL
N-channel Power MOSFET
FEATURES
Type VDSS RDS(on) max ID STL100NH3LL 30 V <0.0035 Ω 25A (1) t(s)1. The value is rated according Rthj-pcb c● Improved die-to-footprint ratio du● Very low profile package (1 mm max) ro )● Very low thermal resistance P t(s● Conduction losses reduced te c● Switching losses reduced sole roduApplication b P● Switching applications ) - O leteDescription ct(s bsoThis series utilizes the last advanced design rules uof ST’s proprietary STripFET™ technology. This d - Oprocess complete to unique metallization ro )technique realised the most advanced low voltage P t(sPower MOSFET in PowerFLAT™(6x5). The chip- scaled PowerFLAT™ package allows a significant lete ucboard space saving, still boosting the dperformance. PowerFLAT™( 6x5 ) Figure 1. Internal schematic diagram Obso lete ProTable 1. Device summary soOrder code Ob STL100NH3LL Marking L100NH3LL Package