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L100NH3LL - N-channel Power MOSFET

General Description

ct(s bsoThis series utilizes the last advanced design rules uof ST’s proprietary STripFET™ technology.

This d - Oprocess complete to unique metallization ro )technique realised the most advanced low voltage P t(sPower MOSFET in PowerFLAT™(6x5).

Key Features

  • Type VDSS RDS(on) max ID STL100NH3LL 30 V.

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STL100NH3LL N-channel 30 V - 0.0032 Ω - 25 A - PowerFLAT™ (6x5) STripFET™ III Power MOSFET Features Type VDSS RDS(on) max ID STL100NH3LL 30 V <0.0035 Ω 25A (1) t(s)1. The value is rated according Rthj-pcb c■ Improved die-to-footprint ratio du■ Very low profile package (1 mm max) ro )■ Very low thermal resistance P t(s■ Conduction losses reduced te c■ Switching losses reduced sole roduApplication b P■ Switching applications ) - O leteDescription ct(s bsoThis series utilizes the last advanced design rules uof ST’s proprietary STripFET™ technology. This d - Oprocess complete to unique metallization ro )technique realised the most advanced low voltage P t(sPower MOSFET in PowerFLAT™(6x5).