DESCRIPTION
ABSOLUTE MAXIMUM RATINGS
Symbol Vs Vi V5 - V4 V4 - V3 Io Iο VINH Ptot Supply Voltage Input Voltage Upper Power Transistor VCE Lower Power Transistor VCE DC Output Current Peak Output Current (internally limited) Input Inhibit Voltage Total Power Dissipation at Tcase = 75 °C) 40 40 3 4 - Vs + 5 - Vs - 1.5 25 Parameter Value ±20 Unit V Vs V V A A V V W Pentawatt® ORDER CODE : L149V TEST CIRCUIT March 1993 1/6 L149 CONNECTION DIAGRAM (top view) SCHEMATIC DIAGRAM 2/6 L149 THERMAL DATA Symbol Rth-j-case Thermal resistance junction-case Parameter max Value 3 Unit °C/W ELECTRICAL CHARACTERISTICS
(Tj = 25 °C, Vs = ± 16V) Symbol Vs Id Iin hFE GV VCEsat Vos VINH Parameter Supply Voltage Quiescent Drain Current Input current DC current drain Voltage gain Saturation voltage (for each transistor) Input offset voltage Inhibit input voltage (pins 1-3) Vs = ± 16 V Vs = ± 16 V Vs = ± 16 V Vs = ± 16 V Io = 3A Vs = ± 16 V ON condition OFF condition RINH SR B Inhibit input resistance Slew rate Power bandwidth Vo = ± 10V, d = 1%, RL = 8Ω ± 1.8 2.0 30 200 Vi = 0V Io = 3A Io = 1.5A 6000 30 200 10000 1 3.5 0.3 ± 0.3 400 Test conditions Min.
STMicroelectronics
