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L3100B Datasheet PDF

STMicroelectronics L3100B

the L3100B a reliable protection device for very exposed equipment, or when series resistors are very low. The breakdown voltage can be easily programmed by using an external zener diode. The current limiting function is achieved with the use of a resistor between the gate N and the cathode.
Part No. L3100B
Datasheet L3100B Download
Manufacturer
STMicroelectronics
Description OVERVOLTAGE AND OVERCURRENT PROTECTION
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L3100B datasheet page 1 preview

FEATURES

UNIDIRECTIONAL FUNCTION PROGRAMMABLE BREAKDOWN VOLTAGE UP TO 265 V PROGRAMMABLE CURRENT LIMITATION FROM 50 mA TO 550 mA HIGH SURGE CURRENT CAPABILITY IPP = 100A 10/1000 µs

DESCRIPTION

Dedicated to sensitive telecom equipment protection, this device can provide both voltage protection and current limitation with a very tight tolerance. Its high surge current capability makes A multiple protection mode can also be performed when using several zener diodes, providing each line interface with an optimized protection level. The value of the resistor will determine the level of the desired current. DIL 8 SCHEMATIC DIAGRAM Anode Gate N Gate P Cathode COMPLIESWITH THE FOLLOWING STANDARDS : CCITT K17 - K20 VDE 0433 CNET 10/700 5/310 10/700 5/200 0.5/700 0.2/310 µs µs µs µs µs µs 1.5 38 2 50 1.5 38 kV A kV A kV A CONNECTION DIAGRAM Gate N NC Gate P Cathode 1 2 3 4 8 7 6 5 Anode Anode Anode Anode TM: ASD is trademarks of SGS-THOMSON Microelectronics. September 1998 Ed : 3A 1/8 L3100B/L31...
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