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L50NH3LL - N-channel Power MOSFET

General Description

“STripFET™” technology.

ucis optimized for low on-resistance and minimal dgate charge.

Key Features

  • Type VDSS RDS(on) ID STL50NH3LL 30V.

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STL50NH3LL N-channel 30 V - 0.011 Ω - 13 A - PowerFLAT™ (6x5) ultra low gate charge STripFET™ Power MOSFET Features Type VDSS RDS(on) ID STL50NH3LL 30V <0.013Ω 13A (4) t(s)■ Improved die-to-footprint ratio ■ Very low profile package (1 mm max) uc■ Very low thermal resistance rod■ Very low gate charge ■ Low threshold device lete PApplications o■ Switching application ObsDescription ) -This application specific Power MOSFET is the t(slatest generation of STMicroelectronics unique “STripFET™” technology. The resulting transistor ucis optimized for low on-resistance and minimal dgate charge. The Chip-scaled PowerFLAT™ ropackage allows a significant board space saving, Obsolete Pstill boosting the performance. PowerFLAT™( 6x5 ) Figure 1. Internal schematic diagram Table 1.