DESCRIPTION
In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS
s LIGHTING s IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC ORDERING INFORMATION SALES TYPE STL5NK65Z MARKING L5NK65Z PACKAGE PowerFLAT™ (5x5) PACKAGING TAPE & REEL April 2002 1/6 STL5NK65Z ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID (2) IDM (2) PTOT (2) PTOT (1) dv/dt (4) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C (Steady State) Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C (Steady State) Total Dissipation at TC = 25°C (Steady State) Derating Factor (2) Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 650 650 ± 30 0.76 0.48 3 2.5 75 0.02 4.5 –55 to 150 Unit V V V A A A W W W/°C V/ns °C THERMAL DATA Symbol Rthj-F Note: 1.
STMicroelectronics
