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L6316 - 4-CHANNEL LOW POWER PREAMPLIFIER

General Description

The L6316 is a BICMOS Silicon Germanium integrated circuit differential preamplifier.

It is designed for use with four-terminal MR read and inductive write heads.

Key Features

  • ES Dual Power Supplies of +5V, 10% and -3v, 6% Low Power consumption; 980 mW @ 800Mb/s (Single Head 100% Write mode duty cycle, Random pattern, Iw = 40mA, Max Ovs). Flip Chip package. L6316 Differential Voltage Bias / Voltage Sense architecture. Current Bias available Programmable read input differential impedance. Selectable read path bandwidth from 200 to >600 MHz (Rmr=40Ω). (Parameter dependent on interconnect) Selectable LF corner (1, 2.5, 3.5 or 5.5 MHz with RMR=40Ω). Noise Figure of merit;.

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www.DataSheet4U.com L6316 4-CHANNEL LOW POWER PREAMPLIFIER DATA BRIEF 1 ■ ■ FEATURES Dual Power Supplies of +5V, 10% and -3v, 6% Low Power consumption; 980 mW @ 800Mb/s (Single Head 100% Write mode duty cycle, Random pattern, Iw = 40mA, Max Ovs). Flip Chip package.L6316 Differential Voltage Bias / Voltage Sense architecture. Current Bias available Programmable read input differential impedance. Selectable read path bandwidth from 200 to >600 MHz (Rmr=40Ω). (Parameter dependent on interconnect) Selectable LF corner (1, 2.5, 3.5 or 5.5 MHz with RMR=40Ω). Noise Figure of merit; 2.2 dB (Rmr=40Ω) MR bias voltage programmable from 70 to 225 mV nom. (5 bits) (7.2mA max). MR bias current programmable from 0.65 to 7.2 mA nom. (5 bits) (225mV max).