L6316 Datasheet PDF | STMicroelectronics

STMicroelectronics L6316

The L6316 is a BICMOS Silicon Germanium integrated circuit differential preamplifier. It is designed for use with four-terminal MR read and inductive write heads. This preamplifier provides programmable read voltage or current bias and write current (5 bit DACs for the read bias and for the write current), fault detection circuitry and servo track writing features.

Part No.	L6316
Datasheet	L6316 Download
Manufacturer	STMicroelectronics
Description	4-CHANNEL LOW POWER PREAMPLIFIER
Buy	Stock & Price

FEATURES

Dual Power Supplies of +5V, 10% and -3v, 6% Low Power consumption; 980 mW @ 800Mb/s (Single Head 100% Write mode duty cycle, Random pattern, Iw = 40mA, Max Ovs). Flip Chip package.L6316 Differential Voltage Bias / Voltage Sense architecture. Current Bias available Programmable read input differential impedance. Selectable read path bandwidth from 200 to >600 MHz (Rmr=40Ω). (Parameter dependent on interconnect) Selectable LF corner (1, 2.5, 3.5 or 5.5 MHz with RMR=40Ω). Noise Figure of merit; 2.2 dB (Rmr=40Ω) MR bias voltage programmable from 70 to 225 mV nom. (5 bits) (7.2mA max). MR bias current programmable from 0.65 to 7.2 mA nom. (5 bits) (225mV max). Read input stage optimized for MR resistance from 20 to 70 Ohm. Programmable read voltage gain of 37, 40, 43, 46 dB Rmr = 40Ω, Rload = 100Ω Fully Differential write driver: Programmable overshoot amplitude (3bits) and duration (2bits). Write current rise/fall time with custom head and interconnect model 140 pS at 40 mA (10% to 90%) (Steady state to steady state) Write current amplitude programmable (5 bits) 0 to 62 mA (0-pk).