L6385E Description
The L6385E is a simple and pact high voltage gate driver, manufactured with the BCD™ “offline” technology, and able to drive a half-bridge of power MOSFET or IGBT devices. The high-side (floating).
L6385E Key Features
- High voltage rail up to 600 V
- dV/dt immunity ± 50 V/nsec in full temperature
- Driver current capability
- 400 mA source
- 650 mA sink
- Switching times 50/30 nsec rise/fall with 1 nF load
- CMOS/TTL Schmitt trigger inputs with hysteresis and pull-down
- Undervoltage lockout on lower and upper driving section
- Internal bootstrap diode
- Outputs in phase with inputs