L6386E Description
The L6386E is a high voltage gate driver, manufactured with the BCD™ “offline” technology, and able to drive simultaneously one high and one low-side power MOSFET or IGBT device.
L6386E Key Features
- High voltage rail up to 600 V
- dV/dt immunity ± 50 V/nsec in full temperature
- Driver current capability
- 400 mA source
- 650 mA sink
- Switching times 50/30 nsec rise/fall with 1 nF load
- CMOS/TTL Schmitt trigger inputs with hysteresis and pull-down
- Undervoltage lockout on lower and upper driving section
- Integrated bootstrap diode
- Outputs in phase with inputs