L6560 Datasheet PDF | STMicroelectronics

STMicroelectronics L6560

The L6560/A is a monolithic integrated circuit in Minidip and SO8 packages, designed as a controller and driver of a discrete power MOS transistor for the implementation of active power factor correction, for sinusoidal line current consumption.

Part No.	L6560
Datasheet	L6560 Download
Manufacturer	STMicroelectronics
Description	POWER FACTOR CORRECTOR
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DESCRIPTION

Realized in mixed BCD technology, the chip integrates: - An undervoltage lockout with micropower startup and hysteresis. - An internal temperature compensated precise band gap reference. - A stable error amplifier. BLOCK DIAGRAM MULTIPOWER BCD TECHNOLOGY Minidip SO8 ORDERING NUMBERS: L6560 L6560D L6560A L6560AD - One quadrant multiplier. - Current sense comparator. - An output overvoltage protection circuit. - A totem-pole output stage able to drive a POWER MOS or IGBT devices with source and sink current of 400mA. The chip works in transition mode and is particularly intended for lamp ballast applications and for low power SMPS. June 2000 1/11 L6560 - L6560A

ABSOLUTE MAXIMUM RATINGS

Symbol IVcc IGD INV, COMP MULT CS ZCD Pin 8 7 1, 2, 3 Parameter ICC + IZ Output Totem Pole Peak Current (2µs) Analog Inputs & Outputs 4 Current Sense Input 5 Zero Current Detector Ptot Power Dissipation @Tamb = 50 °C Tj Junction Temperature Operating Range Tstg Storage Temperature (Minidip) (SO...