LET16045C
Features
- Excellent thermal stability
- mon source configuration
- POUT (@28 V) = 45 W with 16 d B gain @ 1600
MHz
- Be O free package
- In pliance with the 2002/95/EC European directive
Description
The LET16045C is a mon source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband mercial and industrial applications at frequencies up to 1.6 GHz. The LET16045C is designed for high gain and broadband performance operating in mon source mode at 28 V. It is ideal for INMARSAT satellite munications.
1. Drain 2. Gate
2 3. Source
Order code LET16045C
Table 1. Device summary Package M243
Branding LET16045C
April 2014
This is information on a product in full production.
Doc ID022224 Rev 3
1/9
.st.
Maximum ratings
1 Maximum ratings
Symbol
Table 2. Absolute maximum ratings (TCASE = 25 °C)
Parameter
Value
V(BR)DSS VGS ID PDISS TJ TSTG
Drain-source voltage Gate-source voltage Drain current Power dissipation (@ TC = 70 °C) Max. operating...
