LET16045C Key Features
- Excellent thermal stability
- mon source configuration
- POUT (@28 V) = 45 W with 16 dB gain @ 1600
- BeO free package
- In pliance with the 2002/95/EC European
- Part: LET16045C
- Manufacturer: STMicroelectronics (official site)
- Size: 197.56 KB
Related STMicroelectronics Datasheets
| Part Number | Description |
|---|---|
| LET19060C | RF POWER TRANSISTORS Ldmos Enhanced Technology |
| LET20015 | RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package |
| LET20030C | RF POWER TRANSISTORS Ldmos Enhanced Technology |
| LET20030S | RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package |
| LET21004 | RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package |
LET16045C Description
The LET16045C is a mon source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband mercial and industrial applications at frequencies up to 1.6 GHz. The LET16045C is designed for high gain and broadband performance operating in mon source mode at 28 V. It is ideal for INMARSAT satellite munications.