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LET16045C - RF power transistor

General Description

The LET16045C is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.6 GHz.

The LET16045C is designed for high gain and broadband performance operating in common source mode at 28 V.

Key Features

  • Excellent thermal stability.
  • Common source configuration.
  • POUT (@28 V) = 45 W with 16 dB gain @ 1600 MHz.
  • BeO free package.
  • In compliance with the 2002/95/EC European directive.

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Full PDF Text Transcription for LET16045C (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for LET16045C. For precise diagrams, and layout, please refer to the original PDF.

LET16045C RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Datasheet - production data M243 epoxy sealed Figure 1. Pin out 1 3 Fea...

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atasheet - production data M243 epoxy sealed Figure 1. Pin out 1 3 Features • Excellent thermal stability • Common source configuration • POUT (@28 V) = 45 W with 16 dB gain @ 1600 MHz • BeO free package • In compliance with the 2002/95/EC European directive Description The LET16045C is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.6 GHz. The LET16045C is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for INMARSAT satellite communications. 1. Drain

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