STMicroelectronics LET16060C
The LET16060C is a common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.6 GHz. The LET16060C is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for INMARSAT satellite communications.| Part No. | LET16060C |
|---|---|
| Datasheet | LET16060C Download |
| Manufacturer |  STMicroelectronics |
| Description | RF power transistor |
| Buy | Stock & Price |
FEATURES
● Excellent thermal stability● Common source configuration
● POUT (@ 28 V)= 60 W with 13.8 dB gain @ 1600 MHz
● BeO free package
● In compliance with the 2002/95/EC European directive
DESCRIPTION
1. Drain 2. Gate 2 3. Source Order code LET16060C Table 1. Device summary Package M243 Branding LET16060C April 2014 This is information on a product in full production. DocID022249 Rev 3 1/9 Maximum ratings 1 Maximum ratings LET16060C Symbol Table 2. Absolute maximum ratings (TCASE = 25 °C) Parameter Value Unit V(BR)DSS VGS ID PDISS TJ TSTG Drain-source voltage Gate-source voltage Drain current Power dissipation (@ TC = 70 °C) Max. operating junction temperature Storage temperature 80 V -0.5 to +15 V 12 A 100 W 200 °C -65 to +150 °C Table 3. Thermal data Symbol Parameter Rth(JC) Junction-case thermal resistance Value 1.3 Unit °C/W 2/9 DocID022249 Rev 3 LET16060C 2 Electrical characteristics TC = 25 °C Symbol Table 4. Static Test conditions V(BR)DSS VGS = 0 V; IDS = 10 mA IDSS VGS =...
