LET19060C - RF POWER TRANSISTORS Ldmos Enhanced Technology
STMicroelectronics
General Description
The LET19060C is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz.
The LET19060C is designed for high gain and broadband performance operating in common source mode at 26 V.
Full PDF Text Transcription for LET19060C (Reference)
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LET19060C RF POWER TRANSISTORS Ldmos Enhanced Technology TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • IS-97 CDMA PERFORMANCES POUT = 7.5 W EFF. = 18 % • EDGE ...
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RAL MOSFETs • IS-97 CDMA PERFORMANCES POUT = 7.5 W EFF. = 18 % • EDGE PERFORMANCES POUT = 30 W EFF. = 25 % • GSM PERFORMANCES POUT = 65 W EFF. = 45 % • EXCELLENT THERMAL STABILITY • BeO FREE PACKAGE • INTERNAL INPUT/OUTPUT MATCHING • ESD PROTECTION PIN CONNECTION 1 M265 epoxy sealed ORDER CODE LET19060C BRANDING LET19060C DESCRIPTION The LET19060C is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET19060C is designed for high gain and broadband performance operating in common source mode at
LET19060C Datasheet
