STMicroelectronics LET19060C
The LET19060C is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The LET19060C is designed for high gain and broadband performance operating in common source mode at 26 V. Its internal matching makes it ideal for base station applications requiring high linearity.| Part No. | LET19060C |
|---|---|
| Datasheet | LET19060C Download |
| Manufacturer |  STMicroelectronics |
| Description | RF POWER TRANSISTORS Ldmos Enhanced Technology |
| Buy | Stock & Price |
DESCRIPTION
2 3 1. Drain 2. Source 3. GateABSOLUTE MAXIMUM RATINGS
(TCASE = 25 °C) Symbol V(BR)DSS VGS ID PDISS Tj TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation (@ Tc = 70 °C) Max. Operating Junction Temperature Storage Temperature Parameter Value 65 -0.5 to +15 7 130 200 -65 to +150 Unit V V A W °C °C THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance 1.0 °C/W January, 24 2003 1/4 LET19060C ELECTRICAL SPECIFICATION (TCASE = 25 °C) STATIC (Per Section) Symbol V(BR)DSS IDSS IGSS VGS(Q) VDS(ON) GFS CISS* COSS* CRSS Symbol VGS = 0 V VGS = 0 V VGS = 5 V VDS = 26 V VGS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V VGS = 0 V ID = 10 µA VDS = 26 V VDS = 0 V ID = TBD ID = 2 A ID = 2 A VDS = 26 V VDS = 26 V VDS = 26 V f = 1 MHz f = 1 MHz f = 1 MHz 2.5 0.27 4.7 TBD TBD TBD Min. Typ. Max. Test Conditions Min. 65 6 1 4.5 Typ. Max. Unit V µA µA V V mho pF pF pF Unit * Includes Internal Matching Test Conditions DYNAMIC (f = 2000 MHz) P1dB ηD(1) Load mismatch VDD = 26 V...
